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insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c
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www.irf.com 1 to-220ab fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20khz in resonant mode). generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations industry standard to-220ab package lead-free

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0 1 10 100 1000 110 ce c i , collector-to-emitter current (a) v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 1 10 100 1000 5 6 7 8 9 10 11 12 13 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 50v 5s pulse width cc 0 4 8 12 16 20 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage i duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 21w

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! ! -,!!!/ "#$. ! ,! *+,,! !"#$# ,! 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 8.5a i = 17a i = 34a c c c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 0 10 20 30 40 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge

www.irf.com 5 ! "#$ ! ! -,!!!/ 0!(/"#$ 0! ! -,!!!/ 12!( /###"#$0! 3##! 12!( /###"#$ . ! ,! !12!(/###4,.5 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 a t , junction temperature (c) j i = 8.5a i = 17a i = 34a r = 23 ? v = 15v v = 480v g ge cc c c c !12!(/###4,.5 1.80 1.90 2.00 2.10 2.20 0 20406080 a r , gate resistance ( ? ) g v = 480v v = 15v t = 25c i = 17a cc ge j c 0 400 800 1200 1600 2000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter voltage (v) a c ies c res c oes !"# $ $ "%
$ 0 4 8 12 16 20 0 102030405060 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 17a ce c

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*+,,%2!/"#$ #! ! #%2 ! !12!(/###4,.5 0.0 2.0 4.0 6.0 8.0 0 10203040 c i , collector-to-emitter current (a) a r = 23 ? t = 150c v = 480v v = 15v g j cc ge 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j

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6!"#$ 6! 0 200 400 600 100 1000 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 0 40 80 120 160 100 1000 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j

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vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce
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t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge

www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19.
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0 - vcc r l icm vcc = 480f pulsed collector current test circuit

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$ data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/2010
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note: "p" in assembly line position indicates "lead-free"

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